The use temperature of ordinary silicon carbide heating element is 1400 °C. The use temperature of the special silicon carbide heating element can be increased to 1600~1650 °C by using high-temperature soaking sintering, surface spraying ceramics, adding special substances, and cold end impregnation in molten silicon and other technologies, and even up to 1800 °C in argon atmosphere. The resistivity of silicon carbide is 50Ω·cm (20C), 27Ω·cm (300°C), 2Ω·cm (1000°C).
The hot end part of the special silicon carbide heating element is self-bonded sintered silicon carbide. The cold junction is of the same structure, but contains a sufficient amount of silicon to increase its conductivity. There is also the addition of aluminum disilicide (MoSi2) to the silicon carbide in the tropical part, and the long-term use temperature of the resulting heating element can be increased to 1700 °C
